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BUK9880-55A,115

Trans MOSFET N-CH 55V 7A 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-BUK9880-55A,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 765
  • Description: Trans MOSFET N-CH 55V 7A 4-Pin(3+Tab) SOT-223 T/R (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 73m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 584pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.089Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 36 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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