Parameters | |
---|---|
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 73m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 584pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V |
Rise Time | 118ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±15V |
Fall Time (Typ) | 32 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 7A |
Gate to Source Voltage (Vgs) | 15V |
Max Dual Supply Voltage | 55V |
Drain Current-Max (Abs) (ID) | 7A |
Drain-source On Resistance-Max | 0.089Ohm |
Pulsed Drain Current-Max (IDM) | 30A |
Avalanche Energy Rating (Eas) | 36 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
Series | TrenchMOS™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 8W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |