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BUK9K29-100E,115

BUK9K29 Series 100 V 30 A Dual N-Channel TrenchMOS Logic Level FET - LFPAK-56D-8


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9K29-100E,115
  • Package: SOT-1205, 8-LFPAK56
  • Datasheet: PDF
  • Stock: 804
  • Description: BUK9K29 Series 100 V 30 A Dual N-Channel TrenchMOS Logic Level FET - LFPAK-56D-8 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Max Power Dissipation 68W
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 6.1 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3491pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 6.4ns
Fall Time (Typ) 35.1 ns
Turn-Off Delay Time 67.3 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
See Relate Datesheet

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