Parameters | |
---|---|
Avalanche Energy Rating (Eas) | 35 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SC-100, SOT-669 |
Surface Mount | NO |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | THROUGH-HOLE |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 59W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 59W |
Case Connection | DRAIN |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 99m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1139pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 14.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V |
Rise Time | 8ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±15V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 36 ns |
Continuous Drain Current (ID) | 14.8A |
JEDEC-95 Code | MO-235 |
Gate to Source Voltage (Vgs) | 15V |
Max Dual Supply Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 59A |