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BUK9Y104-100B,115

MOSFET N-CH 100V 14.8A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9Y104-100B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 441
  • Description: MOSFET N-CH 100V 14.8A LFPAK (Kg)

Details

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Parameters
Avalanche Energy Rating (Eas) 35 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 59W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1139pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14.8A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 14.8A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 59A
See Relate Datesheet

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