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BUK9Y40-55B,115

MOSFET N-CH 55V 26A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9Y40-55B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 651
  • Description: MOSFET N-CH 55V 26A LFPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 59W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Rise Time 93ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 72 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 36 mJ
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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