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BUK9Y6R0-60E,115

MOSFET N-CH 60V 100A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9Y6R0-60E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 979
  • Description: MOSFET N-CH 60V 100A LFPAK (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 6319pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 39.4nC @ 5V
Rise Time 44ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.006Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Power Dissipation-Max 195W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 195W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
See Relate Datesheet

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