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BUK9Y7R6-40E,115

MOSFET N-CH 40V LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9Y7R6-40E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 288
  • Description: MOSFET N-CH 40V LFPAK (Kg)

Details

Tags

Parameters
Rise Time 20.9ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 16.6 ns
Turn-Off Delay Time 22.7 ns
Continuous Drain Current (ID) 79A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0076Ohm
Factory Lead Time 1 Week
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 40V
Package / Case SC-100, SOT-669
Surface Mount YES
Diameter 44.958mm
Number of Pins 4
Material Plastic
Height 21.1074mm
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
RoHS Status ROHS3 Compliant
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Color Black
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 95W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2403pF @ 25V
Current - Continuous Drain (Id) @ 25°C 79A Tc
Gate Charge (Qg) (Max) @ Vgs 16.4nC @ 5V
See Relate Datesheet

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