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BUK9Y8R7-60E,115

MOSFET N-CH 60V LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9Y8R7-60E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 277
  • Description: MOSFET N-CH 60V LFPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Material Brass, Bronze
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination Crimp
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Plating Gold, Tin
Power Dissipation-Max 147W Tc
Element Configuration Single
Wire Gauge (Max) 24 AWG
Wire Gauge (Min) 20 AWG
Operating Mode ENHANCEMENT MODE
Power Dissipation 147W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 86A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 86A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0087Ohm
Avalanche Energy Rating (Eas) 76.5 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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