BUL213
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 60W |
| Current Rating | 3A |
| Base Part Number | BUL213 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 16 @ 350mA 3V |
| Current - Collector Cutoff (Max) | 250μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Base Voltage (VCBO) | 1.3kV |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 16 |
| Turn Off Time-Max (toff) | 6420ns |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
