BUL416T
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 6A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 700mA 5V |
| Current - Collector Cutoff (Max) | 250μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.33A, 4A |
| Collector Emitter Breakdown Voltage | 800V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 18 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 110W |
| Terminal Position | SINGLE |
| Base Part Number | BUL416 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 110W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
See Relate Datesheet
