BUL810
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 450V |
| Max Power Dissipation | 125W |
| Current Rating | 15A |
| Base Part Number | BUL810 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A 5V |
| Current - Collector Cutoff (Max) | 250μA |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 2.4A, 12A |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 1kV |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 10 |
| VCEsat-Max | 5 V |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
