Parameters | |
---|---|
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 70 ns |
Test Condition | 600V, 15A, 82 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 15A |
Turn Off Time-Nom (toff) | 400 ns |
Current - Collector Pulsed (Icm) | 64A |
Td (on/off) @ 25°C | 70ns/400ns |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 95ns |
RoHS Status | Non-RoHS Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2002 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN |
Additional Feature | HIGH SPEED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 200W |
Transistor Application | MOTOR CONTROL |
Rise Time | 70ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 32A |
JEDEC-95 Code | TO-220AB |