Parameters | |
---|---|
Current Rating | 7A |
Base Part Number | BUT70 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 200W |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 125V |
Max Collector Current | 32A |
Vce Saturation (Max) @ Ib, Ic | 900mV @ 7A, 70A |
Collector Emitter Breakdown Voltage | 125V |
Collector Emitter Saturation Voltage | 900mV |
Collector Base Voltage (VCBO) | 200V |
Emitter Base Voltage (VEBO) | 7V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Lifecycle Status | NRND (Last Updated: 8 months ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 125V |
Max Power Dissipation | 200W |