BUZ30AHXKSA1
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A Tc |
| Rise Time | 70ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 21A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 84A |
| Avalanche Energy Rating (Eas) | 450 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation-Max | 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 125W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 13.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Halogen Free | Halogen Free |
See Relate Datesheet
