Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 95W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 95W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 200m Ω @ 9A, 5V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 14.5A Tc |
Rise Time | 50ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 150 ns |
Continuous Drain Current (ID) | 14.5A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 200V |
Drain-source On Resistance-Max | 0.2Ohm |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 58A |
Contact Plating | Tin |
Avalanche Energy Rating (Eas) | 200 mJ |
Mount | Through Hole |
Mounting Type | Through Hole |
Height | 9.45mm |
Length | 10.36mm |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Width | 4.52mm |
Number of Pins | 3 |
RoHS Status | RoHS Compliant |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Lead Free | Lead Free |
Packaging | Tube |
Published | 2005 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |