BVSS123LT1G
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 40 ns |
| Factory Lead Time | 1 Week |
| Continuous Drain Current (ID) | 170mA |
| Gate to Source Voltage (Vgs) | 20V |
| Lifecycle Status | ACTIVE (Last Updated: 11 hours ago) |
| Drain-source On Resistance-Max | 6Ohm |
| Contact Plating | Tin |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Lead Free | Lead Free |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 225mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 225mW |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 170mA Ta |
| Drain to Source Voltage (Vdss) | 100V |
See Relate Datesheet
