Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Weight | 1.437803g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2004 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 225mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 225mW |
Turn On Delay Time | 3.6 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 10 Ω @ 100mA, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 5V |
Current - Continuous Drain (Id) @ 25°C | 130mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 10V |
Rise Time | 9.7ns |
Drain to Source Voltage (Vdss) | 50V |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 1.7 ns |
Turn-Off Delay Time | 12 ns |
Continuous Drain Current (ID) | 130mA |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -50V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |