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BYG10D-E3/TR

BYG10D-E3/TR datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available at Feilidi


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-BYG10D-E3/TR
  • Package: DO-214AC, SMA
  • Datasheet: PDF
  • Stock: 374
  • Description: BYG10D-E3/TR datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available at Feilidi (Kg)

Details

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Parameters
Operating Temperature - Junction -55°C~150°C
Max Surge Current 30A
Application GENERAL PURPOSE
Forward Voltage 1.15V
Max Reverse Voltage (DC) 200V
Average Rectified Current 1.5A
Number of Phases 1
Reverse Recovery Time 4 μs
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 30A
Reverse Voltage 200V
Max Forward Surge Current (Ifsm) 30A
Recovery Time 4 μs
Height 2.09mm
Length 4.5mm
Width 2.79mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Number of Pins 2
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number BYG10D
Pin Count 2
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Avalanche
Current - Reverse Leakage @ Vr 1μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.15V @ 1.5A
Forward Current 1.5A
See Relate Datesheet

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