BYT51D-TAP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | SOD-57, Axial |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| Published | 2012 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver (Sn96.5Ag3.5) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Subcategory | Rectifier Diodes |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1.5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | E-LALF-W2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Avalanche |
| Current - Reverse Leakage @ Vr | 1μA @ 200V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Case Connection | ISOLATED |
| Forward Current | 1.5A |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 50A |
| Output Current-Max | 1A |
| Forward Voltage | 1.1V |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 1.5A |
| Reverse Recovery Time | 4 μs |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Peak Non-Repetitive Surge Current | 50A |
| Reverse Voltage | 200V |
| Recovery Time | 4 μs |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
