Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | SOD-57, Axial |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Tape & Box (TB) |
Published | 2006 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver (Sn96.5Ag3.5) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
HTS Code | 8541.10.00.80 |
Subcategory | Rectifier Diodes |
Terminal Form | WIRE |
Current Rating | 1A |
Base Part Number | BYV26E |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Avalanche |
Current - Reverse Leakage @ Vr | 5μA @ 1000V |
Voltage - Forward (Vf) (Max) @ If | 2.5V @ 1A |
Case Connection | ISOLATED |
Forward Current | 1A |
Operating Temperature - Junction | -55°C~175°C |
Max Surge Current | 30A |
Output Current-Max | 1A |
Voltage - DC Reverse (Vr) (Max) | 1000V |
Forward Voltage | 2.5V |
Max Reverse Voltage (DC) | 1kV |
Average Rectified Current | 1A |
Reverse Recovery Time | 75 ns |
Peak Reverse Current | 5μA |
Max Repetitive Reverse Voltage (Vrrm) | 1kV |
Peak Non-Repetitive Surge Current | 30A |
Reverse Voltage | 1.1kV |
Max Forward Surge Current (Ifsm) | 30A |
Recovery Time | 75 ns |
Max Junction Temperature (Tj) | 175°C |
Height | 3.6mm |
Length | 4.2mm |
Width | 3.6mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |