BZT55B6V2-GS08
| Parameters | |
|---|---|
| Impedance | 10Ohm |
| Element Configuration | Single |
| Diode Type | ZENER DIODE |
| Current - Reverse Leakage @ Vr | 100nA @ 2V |
| Power Dissipation | 500mW |
| Voltage - Forward (Vf) (Max) @ If | 1.5V @ 200mA |
| Case Connection | ISOLATED |
| Max Reverse Leakage Current | 100nA |
| Impedance-Max | 10Ohm |
| Test Current | 5mA |
| Reference Voltage | 6.2V |
| Zener Voltage | 6.2V |
| Voltage Tol-Max | 2% |
| Voltage Tolerance | 2% |
| ESD Protection | No |
| Height | 1.5mm |
| Length | 3.5mm |
| Width | 1.7mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Contact Plating | Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOD-80 Variant |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~175°C |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101 |
| Tolerance | ±2% |
| JESD-609 Code | e2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER |
| HTS Code | 8541.10.00.50 |
| Max Power Dissipation | 500mW |
| Technology | ZENER |
| Terminal Position | END |
| Terminal Form | WRAP AROUND |
| Peak Reflow Temperature (Cel) | 260 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
See Relate Datesheet
