C3M0120100K
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Surface Mount | NO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2016 |
| Series | C3M™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Technology | SiCFET (Silicon Carbide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | IEC-60747-8-4 |
| JESD-30 Code | R-PSFM-T4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 83W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 155m Ω @ 15A, 15V |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 600V |
| Current - Continuous Drain (Id) @ 25°C | 22A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 15V |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain Current-Max (Abs) (ID) | 22A |
| Drain-source On Resistance-Max | 0.155Ohm |
| Pulsed Drain Current-Max (IDM) | 50A |
| DS Breakdown Voltage-Min | 1000V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
