CBR1-L100M
| Parameters | |
|---|---|
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2013 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 4 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.10.00.80 |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Standard |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T4 |
| Qualification Status | Not Qualified |
| Number of Elements | 4 |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 10μA @ 1000V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
| Output Current-Max | 1.5A |
| Current - Average Rectified (Io) | 1.5A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 50A |
| Voltage - Peak Reverse (Max) | 1kV |
| Breakdown Voltage-Min | 1000V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP |
| Surface Mount | NO |
See Relate Datesheet
