Parameters | |
---|---|
Collector Emitter Saturation Voltage | 500mV |
Frequency - Transition | 50MHz |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 4V |
hFE Min | 20 |
DC Current Gain-Min (hFE) | 20 |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Package / Case | TO-202 |
Transistor Element Material | SILICON |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.29.00.75 |
Subcategory | Other Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Polarity | PNP |
Configuration | SINGLE |
Power Dissipation-Max | 1.75W |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Collector Emitter Voltage (VCEO) | 350mV |
Max Collector Current | 2A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 50MHz |