Parameters | |
---|---|
Number of Elements | 2 |
Configuration | Half Bridge |
Element Configuration | Dual |
Case Connection | ISOLATED |
Power - Max | 560W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 6.5V |
Max Collector Current | 100A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.2kV |
Input Capacitance | 16nF |
Vce(on) (Max) @ Vge, Ic | 6.5V @ 15V, 100A |
NTC Thermistor | No |
Input Capacitance (Cies) @ Vce | 16nF @ 10V |
REACH SVHC | Unknown |
RoHS Status | RoHS Compliant |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2009 |
Series | IGBTMOD™ |
Pbfree Code | yes |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
ECCN Code | EAR99 |
Max Power Dissipation | 560W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Pin Count | 7 |