Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2012 |
Series | IGBTMOD™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 5.8kW |
Terminal Position | UPPER |
Terminal Form | SOLDER LUG |
Pin Count | 4 |
JESD-30 Code | R-MUFM-D4 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 5800W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 3.1V |
Max Collector Current | 1.2kA |
Current - Collector Cutoff (Max) | 6mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 1200A |
Input Capacitance | 200nF |
Turn On Time | 600 ns |
Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 1200A |
Turn Off Time-Nom (toff) | 1750 ns |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 200nF @ 10V |
RoHS Status | Non-RoHS Compliant |