Parameters | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 3V |
Max Collector Current | 150A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 13.2nF |
Turn On Time | 100 ns |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 150A |
Turn Off Time-Nom (toff) | 600 ns |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 13.2nF @ 10V |
VCEsat-Max | 3 V |
RoHS Status | RoHS Compliant |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2004 |
Series | IGBTMOD™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 600W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Current Rating | 150A |
Pin Count | 7 |
Number of Elements | 2 |
Configuration | Half Bridge |
Power Dissipation | 600W |
Case Connection | ISOLATED |
Transistor Application | POWER CONTROL |