Parameters | |
---|---|
Package / Case | Module |
Number of Pins | 11 |
Operating Temperature | -40°C~150°C TJ |
Published | 2012 |
Series | IGBTMOD™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1.15kW |
Reach Compliance Code | unknown |
Number of Elements | 1 |
Configuration | Half Bridge |
Power - Max | 1150W |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.25V |
Max Collector Current | 150A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 15nF |
Max Breakdown Voltage | 1.2kV |
Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 150A |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 15nF @ 10V |
RoHS Status | RoHS Compliant |