Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2012 |
Series | IGBTMOD™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 19 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 600W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
JESD-30 Code | R-XUFM-X19 |
Number of Elements | 6 |
Configuration | Three Phase Inverter |
Case Connection | ISOLATED |
Power - Max | 600W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.8V |
Max Collector Current | 150A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 15nF |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 150A |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 15nF @ 10V |
RoHS Status | Non-RoHS Compliant |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |