CM200DU-12H
| Parameters | |
|---|---|
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Power Dissipation | 600W |
| Case Connection | ISOLATED |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 200A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 17.6nF |
| Turn On Time | 150 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 200A |
| Turn Off Time-Nom (toff) | 600 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 17.6nF @ 10V |
| VCEsat-Max | 3 V |
| RoHS Status | RoHS Compliant |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2004 |
| Series | IGBTMOD™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 7 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 650W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 200A |
| Pin Count | 7 |
See Relate Datesheet
