Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 1999 |
Series | IGBTMOD™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 1.13kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Number of Elements | 2 |
Configuration | Half Bridge |
Case Connection | ISOLATED |
Power - Max | 1130W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 3V |
Max Collector Current | 400A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 35.2nF |
Turn On Time | 250 ns |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 400A |
Turn Off Time-Nom (toff) | 650 ns |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 35.2nF @ 10V |
VCEsat-Max | 3 V |
RoHS Status | RoHS Compliant |