Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2000 |
Series | IGBTMOD™ |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 735W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 735W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.7V |
Max Collector Current | 450A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 250V |
Input Capacitance | 132nF |
Turn On Time | 1200 ns |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 10V, 450A |
Turn Off Time-Nom (toff) | 1400 ns |
IGBT Type | Trench |
NTC Thermistor | No |
Input Capacitance (Cies) @ Vce | 132nF @ 10V |
VCEsat-Max | 2.8 V |
RoHS Status | Non-RoHS Compliant |