CP30TD1-12A
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 26-DIP Module |
| Transistor Element Material | SILICON |
| Operating Temperature | -20°C~150°C TJ |
| Published | 2003 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 26 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 114W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 26 |
| JESD-30 Code | R-XDIP-T26 |
| Qualification Status | Not Qualified |
| Number of Elements | 7 |
| Configuration | Three Phase Inverter with Brake |
| Case Connection | ISOLATED |
| Power - Max | 114W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Three Phase Bridge Rectifier |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 30A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 2.36nF |
| Turn On Time | 130 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 600 ns |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 2.36nF @ 10V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
