Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1W Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 7.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.5 Ω @ 170mA, 4.5V |
Vgs(th) (Max) @ Id | 1.3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 350mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
Rise Time | 7.3ns |
Drain to Source Voltage (Vdss) | 250V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 43 ns |
Turn-Off Delay Time | 23 ns |
Continuous Drain Current (ID) | 350mA |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 0.35A |
Drain-source On Resistance-Max | 7.2Ohm |
DS Breakdown Voltage-Min | 250V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |