CPH6355-TL-W
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.6W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 4.6 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 169m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 172pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V |
| Rise Time | 6.6ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11.4 ns |
| Turn-Off Delay Time | 19.4 ns |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.169Ohm |
| Pulsed Drain Current-Max (IDM) | 12A |
| DS Breakdown Voltage-Min | 30V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
