CSD13202Q2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD13302 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.7W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.7W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9.3m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 997pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 22A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| Rise Time | 28ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 13.6 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 22A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 12V |
| Avalanche Energy Rating (Eas) | 20 mJ |
| Length | 2mm |
| Width | 2mm |
| Thickness | 750μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
