CSD13383F4
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | FemtoFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD13383 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 39 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 44m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 291pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 4.5V |
| Rise Time | 123ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 315 ns |
| Turn-Off Delay Time | 96 ns |
| Continuous Drain Current (ID) | 2.9A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain-source On Resistance-Max | 0.065Ohm |
| Drain to Source Breakdown Voltage | 12V |
| Length | 1.035mm |
| Width | 635μm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Lead Free | Lead Free |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
See Relate Datesheet
