Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | NexFET™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | CSD15571 |
Number of Elements | 2 |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 17.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 15m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 1.9V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 22A Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Rise Time | 17.2ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 4.1 ns |
Turn-Off Delay Time | 9.9 ns |
Continuous Drain Current (ID) | 22A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 20V |
Length | 2mm |
Width | 2mm |
Thickness | 750μm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |