Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | NexFET™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Base Part Number | CSD16301 |
Pin Count | 6 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.3W |
Case Connection | DRAIN |
Turn On Delay Time | 2.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 24m Ω @ 4A, 8V |
Vgs(th) (Max) @ Id | 1.55V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 12.5V |
Current - Continuous Drain (Id) @ 25°C | 5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
Rise Time | 4.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
Vgs (Max) | +10V, -8V |
Fall Time (Typ) | 1.7 ns |
Turn-Off Delay Time | 4.1 ns |
Continuous Drain Current (ID) | 5A |
Threshold Voltage | 1.2V |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 5A |
Drain-source On Resistance-Max | 0.034Ohm |
Drain to Source Breakdown Voltage | 25V |
Pulsed Drain Current-Max (IDM) | 20A |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 1.2 V |
Height | 800μm |
Length | 2mm |
Width | 2mm |
Thickness | 750μm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |