Parameters | |
---|---|
Rise Time | 15ns |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | NexFET™ |
Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Vgs (Max) | +10V, -8V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Fall Time (Typ) | 17 ns |
Termination | SMD/SMT |
Turn-Off Delay Time | 27 ns |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 1.1V |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Gate to Source Voltage (Vgs) | 10V |
Peak Reflow Temperature (Cel) | 260 |
Drain-source On Resistance-Max | 0.0035Ohm |
Base Part Number | CSD16321 |
Drain to Source Breakdown Voltage | 25V |
Pin Count | 8 |
Number of Elements | 1 |
Pulsed Drain Current-Max (IDM) | 200A |
Power Dissipation-Max | 3.1W Ta |
Element Configuration | Single |
Dual Supply Voltage | 25V |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Case Connection | DRAIN |
Nominal Vgs | 1.1 V |
Turn On Delay Time | 9 ns |
Height | 1.05mm |
FET Type | N-Channel |
Length | 5mm |
Width | 6mm |
Transistor Application | SWITCHING |
Thickness | 1mm |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Rds On (Max) @ Id, Vgs | 2.4m Ω @ 25A, 8V |
Radiation Hardening | No |
Contact Plating | Tin |
Vgs(th) (Max) @ Id | 1.4V @ 250μA |
Mount | Surface Mount |
REACH SVHC | No SVHC |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 12.5V |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Lead Free | Contains Lead |
Current - Continuous Drain (Id) @ 25°C | 31A Ta 100A Tc |
Package / Case | 8-PowerTDFN |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 4.5V |
Number of Pins | 8 |