Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Series | NexFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Base Part Number | CSD16325 |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 3.1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Case Connection | DRAIN |
Turn On Delay Time | 10.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2m Ω @ 30A, 8V |
Vgs(th) (Max) @ Id | 1.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 12.5V |
Current - Continuous Drain (Id) @ 25°C | 33A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
Rise Time | 16ns |
Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
Vgs (Max) | +10V, -8V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 1.1V |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 33A |
Drain-source On Resistance-Max | 0.0027Ohm |
Dual Supply Voltage | 25V |
Avalanche Energy Rating (Eas) | 500 mJ |
Nominal Vgs | 1.1 V |
Height | 1.05mm |
Length | 5mm |
Width | 6mm |
Thickness | 1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |