Parameters | |
---|---|
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 25V |
Pulsed Drain Current-Max (IDM) | 90A |
Dual Supply Voltage | 25V |
Avalanche Energy Rating (Eas) | 72 mJ |
Nominal Vgs | 2 V |
Feedback Cap-Max (Crss) | 55 pF |
Height | 1.1mm |
Length | 3.3mm |
Width | 3.3mm |
Thickness | 1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | NexFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Base Part Number | CSD16409 |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 2.6W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.6W |
Case Connection | DRAIN |
Turn On Delay Time | 6.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.2m Ω @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 12.5V |
Current - Continuous Drain (Id) @ 25°C | 15A Ta 60A Tc |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 4.5V |
Rise Time | 10.6ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | +16V, -12V |
Fall Time (Typ) | 3.4 ns |
Turn-Off Delay Time | 6.3 ns |
Continuous Drain Current (ID) | 60A |