Parameters | |
---|---|
Turn On Delay Time | 4.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10.3m Ω @ 10A, 8V |
Vgs(th) (Max) @ Id | 1.8V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 14A Ta 44A Tc |
Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V |
Rise Time | 5.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
Vgs (Max) | +10V, -8V |
Fall Time (Typ) | 2.3 ns |
Turn-Off Delay Time | 9.9 ns |
Continuous Drain Current (ID) | 14A |
Threshold Voltage | 1.3V |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 47A |
Drain to Source Breakdown Voltage | 30V |
Avalanche Energy Rating (Eas) | 65 mJ |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 1.3 V |
Feedback Cap-Max (Crss) | 35 pF |
Height | 1.1mm |
Length | 3.3mm |
Width | 3.3mm |
Thickness | 1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 21 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | NexFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Base Part Number | CSD17308 |
Pin Count | 8 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.7W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.7W |
Case Connection | DRAIN |