CSD17308Q3T
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14A Ta 44A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
| Vgs (Max) | +10V, -8V |
| Continuous Drain Current (ID) | 44A |
| Threshold Voltage | 1.3V |
| Drain Current-Max (Abs) (ID) | 14A |
| Drain-source On Resistance-Max | 0.0165Ohm |
| Pulsed Drain Current-Max (IDM) | 167A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 65 mJ |
| Feedback Cap-Max (Crss) | 35 pF |
| Length | 3.3mm |
| Factory Lead Time | 1 Week |
| Width | 3.3mm |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Thickness | 1mm |
| REACH SVHC | No SVHC |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 8-PowerTDFN |
| Lead Free | Contains Lead |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Reach Compliance Code | not_compliant |
| Base Part Number | CSD17308 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.7W Ta 28W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10.3m Ω @ 10A, 8V |
| Vgs(th) (Max) @ Id | 1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V |
See Relate Datesheet
