Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | NexFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Base Part Number | CSD17311 |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 3.2W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.2W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2m Ω @ 30A, 8V |
Vgs(th) (Max) @ Id | 1.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4280pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 32A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 4.5V |
Rise Time | 18ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
Vgs (Max) | +10V, -8V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 33 ns |
Continuous Drain Current (ID) | 32A |
Threshold Voltage | 1.2V |
Gate to Source Voltage (Vgs) | 10V |
Pulsed Drain Current-Max (IDM) | 200A |
DS Breakdown Voltage-Min | 30V |
Height | 1.05mm |
Length | 5mm |
Width | 6mm |
Thickness | 1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |