CSD17313Q2
| Parameters | |
|---|---|
| Threshold Voltage | 1.3V |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain-source On Resistance-Max | 0.042Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Height | 800μm |
| Length | 2mm |
| Width | 2mm |
| Thickness | 750μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD17313 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 2.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 4A, 8V |
| Vgs(th) (Max) @ Id | 1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 4.5V |
| Rise Time | 3.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 3V 8V |
| Vgs (Max) | +10V, -8V |
| Fall Time (Typ) | 1.3 ns |
| Turn-Off Delay Time | 4.2 ns |
| Continuous Drain Current (ID) | 5A |
See Relate Datesheet
