CSD17318Q2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD17318 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 16W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15.1m Ω @ 8A, 8V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 879pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 8V |
| Vgs (Max) | ±10V |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain-source On Resistance-Max | 0.03Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Avalanche Energy Rating (Eas) | 7.7 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 800μm |
| Length | 2mm |
| Width | 2mm |
| Thickness | 750μm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
