Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | FemtoFET™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | CSD17483 |
Number of Elements | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
Case Connection | DRAIN |
Turn On Delay Time | 3.3 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 240m Ω @ 500mA, 8V |
Vgs(th) (Max) @ Id | 1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 4.5V |
Rise Time | 1.3ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Fall Time (Typ) | 3.4 ns |
Turn-Off Delay Time | 10.6 ns |
Continuous Drain Current (ID) | 1.5A |
Threshold Voltage | 850mV |
Gate to Source Voltage (Vgs) | 12V |
Drain-source On Resistance-Max | 0.55Ohm |
Drain to Source Breakdown Voltage | 30V |
Height | 350μm |
Length | 1.035mm |
Width | 635μm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |