CSD17551Q3A
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.6W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 4.5V |
| Rise Time | 24ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 12 ns |
| Factory Lead Time | 1 Week |
| Continuous Drain Current (ID) | 12A |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Threshold Voltage | 1.6V |
| Contact Plating | Tin |
| Gate to Source Voltage (Vgs) | 20V |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Drain to Source Breakdown Voltage | 30V |
| Package / Case | 8-PowerVDFN |
| Max Junction Temperature (Tj) | 150°C |
| Number of Pins | 8 |
| Nominal Vgs | 1.6 V |
| Transistor Element Material | SILICON |
| Height | 900μm |
| Operating Temperature | -55°C~150°C TJ |
| Length | 3.3mm |
| Packaging | Tape & Reel (TR) |
| Width | 3.3mm |
| Thickness | 800μm |
| Series | NexFET™ |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| REACH SVHC | Unknown |
| Pbfree Code | yes |
| RoHS Status | ROHS3 Compliant |
| Part Status | Active |
| Lead Free | Lead Free |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD17551 |
See Relate Datesheet
