Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | NexFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | CSD17570 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.2W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 5 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 0.69m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 1.9V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 13600pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 100A Ta |
Gate Charge (Qg) (Max) @ Vgs | 121nC @ 4.5V |
Rise Time | 36ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 44 ns |
Turn-Off Delay Time | 144 ns |
Continuous Drain Current (ID) | 100A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 53A |
Drain-source On Resistance-Max | 0.00092Ohm |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 360A |
Avalanche Energy Rating (Eas) | 450 mJ |
Length | 5mm |
Width | 6mm |
Thickness | 950μm |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |